mitsubishi hvigbt modules CM400E2G-130H high power switching use 3 th -version hvigbt (high voltage insula ted gate bipolar transistor) modules insulated type prepared by k.kurachi revision: b i.umezaki 24-feb.-2009 date hvigbt (high voltage insulated gate bipolar transistor) modules CM400E2G-130H i c ????????? 400 a v ces ???????? 6500 v 1-element in a pack (for brake chopper) insulated type alsic baseplate application traction drives, high reliability converters / inverters, dc choppers outline drawing & circuit diagram dimensions in mm hvm-1048-b 1 of 8
mitsubishi hvigbt modules CM400E2G-130H high power switching use 3 th -version hvigbt (high voltage insula ted gate bipolar transistor) modules insulated type hvigbt (high voltage insulated gate bipolar transistor) modules hvm-1048-b 2 of 8 maximum ratings symbol item conditions ratings unit t j = -40 c 5800 t j = +25 c 6300 v ces collector-emitter voltage v ge = 0 v t j = +125 c 6500 v v ges gate-emitter voltage v ce = 0v, t j = 25c 20 v i c dc, t c = 80c 400 a i cm collector current pulse (note 1) 800 a i e dc 400 a i em emitter current (note 2) pulse (note 1) 800 a p c maximum power dissipation (note 3) t c = 25c, igbt part 5900 w v iso isolation voltage rms, sinusoidal, f = 60hz, t = 1 min. 10200 v v e partial discharge extinction voltage rms, sinusoidal, f = 60hz, q pd 10 pc 5100 v t j junction temperature ? 40 ~ +150 c t op operating temperature ? 40 ~ +125 c t stg storage temperature ? 40 ~ +125 c t psc maximum short circuit pulse width v cc =4500v, v ce v ces , v ge =15v, t j =125c 10 s electrical characteristics limits symbol item conditions min typ max unit t j = 25c ? ? 7 i ces collector cutoff current v ce = v ces , v ge = 0v t j = 125c ? 20 60 ma v ge(th) gate-emitter threshold voltage v ce = 10 v, i c = 40 ma, t j = 25c 5.0 6.0 7.0 v i ges gate leakage current v ge = v ges , v ce = 0v, t j = 25c ? 0.5 ? 0.5 a c ies input capacitance ? 82.0 ? nf c oes output capacitance ? 5.0 ? nf c res reverse transfer capacitance v ce = 10 v, v ge = 0 v, f = 100 khz t j = 25c ? 1.4 ? nf q g total gate charge v cc = 3600 v, i c = 400 a v ge = 15 v, t j = 25 c ? 6.6 ? c t j = 25c ? 4.5 ? v ce(sat) collector-emitter saturation voltage i c = 400 a (note 4) v ge = 15 v t j = 125c ? 4.6 ? v t d(on) turn-on delay time ? 1.2 ? s t r turn-on rise time ? 0.35 ? s e on(10%) turn-on switching energy (note 5) v cc = 3600 v, i c = 400 a v ge = 15 v, r g(on) = 15 ? t j = 125 c, l s = 170 nh t (igbt_off) = 60 s (note 6) , inductive load ? 3.0 ? j/p t d(off) turn-off delay time ? 8.2 ? s t f turn-off fall time ? 0.5 ? s t f2 turn-off fall time ? 3.1 ? s e off(10%) turn-off switching energy (note 5) v cc = 3600 v, i c = 400 a v ge = 15 v, r g(off) = 50 ? t j = 125 c, l s = 170 nh inductive load ? 2.7 ? j/p t j = 25 c ? 4.0 ? v ec emitter-collector voltage (note 2) i e = 400 a (note 4) v ge = 0 v t j = 125 c ? 3.6 ? v t rr reverse recovery time (note 2) ? 1.0 ? s t rr2 reverse recovery time (note 2) ? 2.4 ? s q rr reverse recovery charge (note 2) ? 740 ? c e rec(10%) reverse recovery energy (note 2), (note 5) v cc = 3600 v, i e = 400 a v ge = 15 v, r g(on) = 15 ? t j = 125 c, l s = 170 nh t (igbt_off) = 60 s (note 6) , inductive load ? 1.4 ? j/p
mitsubishi hvigbt modules CM400E2G-130H high power switching use 3 th -version hvigbt (high voltage insula ted gate bipolar transistor) modules insulated type hvigbt (high voltage insulated gate bipolar transistor) modules thermal characteristics limits symbol item conditions min typ max unit r th(j-c)q thermal resistance junction to case, igbt part ? ? 21.0 k/kw junction to case, fwdi part ? ? 33.0 k/kw r th(j-c)r thermal resistance junction to case, clamp-di part ? ? 33.0 k/kw r th(c-f) contact thermal resistance case to fin, grease = 1w/mk, d (c-f) = 100 m ? 9.0 ? k/kw mechanical characteristics limits symbol item conditions min typ max unit m t m8: main terminals screw 7.0 ? 15.0 nm m s m6: mounting screw 3.0 ? 6.0 nm m t mounting torque m4: auxiliary terminals screw 1.0 ? 3.0 nm m mass ? 1.35 ? kg cti comparative tracking index 600 ? ? ? d a clearance 26.0 ? ? mm d s creepage distance 56.0 ? ? mm collector to emitter ? 27.0 ? nh l p ce parasitic stray inductance anode to cathode ? 54.0 ? nh t c = 25c, collector to emitter ? 0.19 ? m
r cc?+ee? internal lead resistance t c = 25c, anode to cathode ? 0.38 ? m
note 1. pulse width and repetition rate should be such that junction temperature (t j ) does not exceed t opmax rating (125c). note 2. the symbols represent characteristics of the anti-parallel, em itter to collector free-wheel diode (fwdi) and the brake chopper, anode to cathode clamp diode (clamp-di). note 3. junction temperature (t j ) should not exceed t jmax rating (150c). note 4. pulse width and repetition rate should be such as to cause negligible temperature rise. note 5. e on(10%) / e off(10%) / e rec(10%) are the integral of 0.1v ce x 0.1i c x dt . note 6. t (igbt_off) definition is shown as follows. i c t (igbt_off) time hvm-1048-b 3 of 8
mitsubishi hvigbt modules CM400E2G-130H high power switching use 3 th -version hvigbt (high voltage insula ted gate bipolar transistor) modules insulated type hvigbt (high voltage insulated gate bipolar transistor) modules hvm-1048-b 4 of 8 fig. ? definitions of switching times & energies of igbt part fig. ? definitions of reverse recove ry charge & energy of fwdi part eoff = t4 t3 ic?vce dt tf2 td(off) 10%v ce 90%i c 90%v ge v ge 10%i c 50%i c di dt t3 t4 eon = t2 t1 ic?vce dt 0 ton tr td(on) 0 i c v ce 90%i c 10%i c 10%v ge v cc 10%v ce tf = (0.9ic ? 0.1ic) / (di/dt) toff = td(off) + tf t1 t2 qrr = ? t6 0 ie dt erec = ? t6 t5 ie?vec dt di/dt irr 0 0 v ec (v r ) i e (i f ) 10%v ec 10%i e di dt t5 t6 trr2 trr 0
mitsubishi hvigbt modules CM400E2G-130H high power switching use 3 th -version hvigbt (high voltage insula ted gate bipolar transistor) modules insulated type hvigbt (high voltage insulated gate bipolar transistor) modules performance curves hvm-1048-b 5 of 8 output characteristics (typical) 0 200 400 600 800 012345678 collector - emitter voltage [v] collector current [a] v ge = 8v v ge = 10v v ge = 15v v ge = 12v tj = 125c v ge = 20v transfer characteristics (typical) 0 200 400 600 800 024681012 gate - em itter voltage [v] collector current [a] tj = 25c v ce = v ge tj = 125c collector-emitter saturation voltage characteristics (typical) 0 200 400 600 800 02468 collector-em itter saturation voltage [v] collector current [a] v ge = 15v tj = 125c tj = 25c free-wheel diode forward characteristics (typical) 0 200 400 600 800 02468 emitter-collector voltage [v] emitter current [a] tj = 25c tj = 125c
mitsubishi hvigbt modules CM400E2G-130H high power switching use insulated type 3 th -version hvigbt (high voltage insula ted gate bipolar transistor) modules performance curves capacitance characteristics (typical) 0 1 10 100 1000 0.1 1 10 100 collector-emitter voltage [v] capacitance [nf] cies v ge = 0v, tj = 25c f = 100khz coes cres hvigbt (high voltage insulated gate bipolar transistor) modules hvm-1048-b 6 of 8 half-bridge switching energy characteristics (typical) 0 1 2 3 4 5 6 7 0 200 400 600 800 1000 collector current [a] switching energies [j/p] erec v cc = 3600v, v ge = 15v r g(on) = 15 ? , r g(off) = 50 ? l s = 170nh, tj = 125c inductive load eoff eon gate charge characteristics (typical) -15 -10 -5 0 5 10 15 20 024681 gate charge [c] gate-emitter voltage [v] 0 v ce = 3600v, i c = 400a tj = 25c half-bridge switching energy characteristics (typical) 0 1 2 3 4 5 6 7 8 0 20406080100 gate res is tor [ohm ] switching energies [j/p] erec v cc = 3600v, i c = 400a v ge = 15v, l s = 170nh tj = 125c, inductive load eon eoff
mitsubishi hvigbt modules CM400E2G-130H high power switching use insulated type 3 th -version hvigbt (high voltage insula ted gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules hvm-1048-b 7 of 8 performance curves half-bridge switching time characteristics (typical) 0.01 0.1 1 10 100 10 100 1000 collector current [a] switching times [s] tf v cc = 3600v, v ge = 15v r g(on) = 15 ? , r g(off) = 50 ? l s = 170nh, tj = 125c inductive load tr td( on) td(off) transient thermal impedance characteristics 0 0.2 0.4 0.6 0.8 1 1.2 0.001 0.01 0.1 1 10 tim e [s ] normalized transient thermal impedance rth( j-c) q = 21.0k/kw rth( j-c) r = 33.0k/kw free-wheel diode reverse recovery characteristics (typical) 0.1 1 10 100 10 100 1000 emitter current [a] reverse recovery time [s] 10 100 1000 10000 reverse recovery current [a] trr irr v cc = 3600v, v ge = 15v r g(on) = 15 ? , l s = 170nh tj = 125c, inductive load ? ? ? ? ? ? ? ? ? ? = ? ? ? ? ? ? ? ? ? ? = ? exp1 rz i t n 1i i )cj(th )t( 1234 r i [k/kw] : 0.0096 0.1893 0.4044 0.3967 i [sec] : 0.0001 0.0058 0.0602 0.3512
mitsubishi hvigbt modules CM400E2G-130H high power switching use insulated type 3 th -version hvigbt (high voltage insula ted gate bipolar transistor) modules performance curves reverse bias safe operating area (rbsoa) 0 200 400 600 800 1000 1200 0 2000 4000 6000 8000 collector-emitter voltage [v] collector current [a] v cc 4500v, v ge = 15v tj = 125c, r g(off) = 50 ? free-wheel diode reverse recovery safe operating area (rrsoa) 0 200 400 600 800 1000 1200 0 2000 4000 6000 8000 collector-emitter voltage [v] reverse recovery current [a] v cc 4500v, tj = 125c di/dt < 2000a/ s short circuit safe operating area (scsoa) 0 2000 4000 6000 8000 10000 0 2000 4000 6000 8000 collector-emitter voltage [v] collector current [a] v cc 4500v, v ge = 15v r g(on) = 15 ? , r g(off) = 50 ? tj = 125c hvigbt (high voltage insulated gate bipolar transistor) modules hvm-1048-b 8 of 8
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